Through the design team's leading edge in the design and manufacturing processes of silicon carbide power semiconductorswe have developed a new type of silicon carbide PHOTO DMOSRELAY. With the special characteristics of the third-generation semiconductor, the silicon carbide PHOTO DMOSRELAY boasts higher load voltages (up to 1800V, 3300V, and 6500V ultra-high voltages), has a low leakage current(below 10nA) under the high-voltage-load and a stable operation in high-temperature working environments up to 150°C. It has been reliably verified and widely applied in the BMS(Battery Management Systems) of the new generation of new energy vehicles and energy storage devices.
At present, APSEMI's procucts are mainly applied to: BMS battery management systems, smart meters, communication
equipment, testing equipment, data acquisition equipment, automotive diagnostic equipment, semiconductor test equipment
PCB test equipment, security equipment, PLC controllers, I/O control, etc. Based on the research and development, design,
and advanced chip manufacturing processes in the field of compound semiconductors and new materials such as the third-generation semiconductor silicon carbide, APSEMI continuously updates and iterates its technology. APSEMI provides high-efficiency and cost-effective semiconductor chip products and solutions for application fields such as smart industry, smart
terminals, smart cities, smart energy, and automotive electronics.