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先进光半导体
  • ------热电堆温度传感器
    TO46 封装
    TO39 封装
  • ------碳化硅及晶圆
    碳化硅光耦继电器
    碳化硅MOS
    碳化硅SBD
    碳化硅晶圆
  • ------通用型光耦继电器
  • 1路常开及2路常开1a2a
    0~80V
    0~180mA
    200~900mA
    1000~2000mA
    2100~5000mA
    100~250V
    0~180mA
    200~900mA
    1000~2000mA
    2100~5000mA
    300~400V
    0~90mA
    100~180mA
    200~500mA
    600~800V
    0~90mA
    100~180mA
    200~600mA
    1000~1500V
    20~100mA
  • 1路常闭及2路常闭1b2b
    0~80V
    0~180mA
    200~900mA
    1000~2000mA
    2100~5000mA
    100~250V
    0~180mA
    200~900mA
    1000~2000mA
    2100~5000mA
    300~400V
    0~90mA
    100~180mA
    200~600mA
    600~800V
    0~90mA
    100~180mA
    200~600mA
  • 常开常闭双路触点1a1b
    0~60V
    100~500mA
    1000~2000mA
    200~250V
    100~250mA
    350~400V
    50~90mA
    100~200mA
    600V
  • ------栅级驱动光耦
    APPL-P314
    APPL-W314
    APPL-P341
    APPL-W341
    APPL-P343
    APPL-W343
    APPL-P480
    APPL-W480
    APPL-4800
  • ------高速通信光耦
    APPL-2501/APPL-2531
    APPL-2601/APPL-2631
    APPL-0601/APPL-0631
    APPL-M61L/APPL-M75L
    APPL-4502/03/04
  • ------固态继电器光耦
    APH0213/0223
    APH1213/1223
    APH2213/2223
    APH3213/3223
    APH4213/4223
  • ------常用型光耦
    光伏光耦
    ALP-190/ALP-191
    APPL-3902/APPL-3904/APPL-3905/APPL-3906
    APV1121/APV2221
    可控硅光耦
    MOC3020/21/22/23
    MOC3041/42/43
    MOC3051/52/53
    MOC3061/62/63
    MOC3081/82/83
    晶体管光耦
    AFH615A-4
    AFH6156-4
    AFH628A-3
    AFH6286-3
    4N25/4N35
    MOSFET驱动光耦
    APV1122
    APV1123
    APV1124
    APV1125
    光纤耦合器
    光耦系列晶圆
光耦继电器相关知识
05/11
2020

  固态继电器是一种无触点电子开关,由分立元器件、膜固定电阻网络和芯片,采用混合工艺组装来实现控制回路(输入电路)与负载回路(输出电路)的电隔离及信号耦合,由固态器件实现负载的通断切换功能,内部无任何可动部件。尽管市场上的固态继电器型号规格...

05/09
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  Panasonic(松下)型号:AQY210SX      AQY210SX基本参数:  特点:实现了超小型尺寸的PhotoMOS4脚SO封装  封装:SOP4端子形状:Surface-Mount  包装方式:Tubepacking  ...

05/09
2020

  光耦继电器是一种在输入量满足某些规定的条件时,能在一个或多个电器输出电路中产生跃变的一种器件,并可用于中性点直接接地系统,作为零序电流保护的方向元件。它的应用非常广泛,以下就是欧姆龙小型功率继电器的优势应用及工作原理:  额定工作电压或...

05/08
2020

   VishayIntertechnology,Inc。推出其VOR系列混合固态继电器中的首批3颗器件,为通信、工业、保安系统和医疗设备提供了高可靠性和无噪声切换功能。新的VishaySemiconductors1FormAVOR114...

05/08
2020

   TLP182和TLP183是采用SO6封装的低输入电流晶体管输出光耦。    通过采用东芝原创的高输出LED,这不仅保证了在传统输入电流5mA条件下的高电流传输率,也保证了与低LED电流0。5mA条件下具有相同的电流传输率。    ...

05/07
2020

  由于光耦继电器的输入阻抗与一般干扰源的阻抗相比较小,因此分压在光电耦合器的输入端的干扰电压较小,它所能提供的电流并不大,不易使半导体二极管发光;由于光电耦合器的外壳是密封的,它不受外部光的影响,光电耦合器的隔离电阻很大(约1012Ω)、...

05/07
2020

  光耦继电器的种类及替代方法!  光耦是开关电源电路中的常用器件,光电耦合器分为两种:一种为非线性光耦,另一种为线性光耦。常用的4N系列,如4N2 5,4N35,4N2 6,4N36等。光耦是非线性的,常用的线性光耦为PC8 17 A——...

05/07
2020

  AQY210产品系列是一个固态继电器,它不同于光耦的.不同点如下:  结构不同:光耦继电器内部为光耦+可控硅的组合.光耦是发光二极管,受光器为光敏二极管、光敏三极管组合.由此可见光耦继电器是包含光耦的  产品用途不同:固态继电器是继电器...

05/06
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南方先进电子APY210T系列产品优势替代料号:CPC1035NTRCPC1035NCPC1230NTRCPC1230NCPC1030NCPC1030NTR产品基本参数:SPST-NO (1 Form A)0V ~ 350V100mA35 ...

05/06
2020

  光耦继电器是一种可把电信号转换成为光信号,然后又将光信号恢复为电信号的半导体器件,它属于一种电——光——电转换器件。其基本结构是将光发射器和光敏接收器装在同一密闭的壳体内,彼此间用透明绝缘体隔离。常见的光发射器为红外发光二极管,其引脚作...

04/30
2020

  当采用光耦隔离数字信号进行控制系统设计时,光耦继电器的传输特性,即传输速度,往往成为系统最大数据传输速率的决定因素。在许多总线式结构的工业测控系统中,为了防止各模块之间的相互干扰,同时不降低通讯波特率,开发者不得不采用高速光耦来实现模块...

04/29
2020

  线性光耦的电流传输特性曲线接近直线,并且小信号时性能较好,能以线性特性进行隔离控制。开关电源中常用线性光耦,如果使用非线性光耦,有可能使振荡波形变坏,严重时出现寄生振荡,使数千赫的振荡频率被数十到数百赫的低频振荡依次为号调制。由此产生的...

04/28
2020

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04/27
2020

  光电耦合器件(简称光耦)是把发光器件(如发光二极体)和光敏器件(如光敏三极管)组装在一起,经由过程光线完成耦合组成电—光和光—电的转换器件。  当电旌旗灯号送入光电耦合器的输入端时,发光二极体经由过程电流而发光,光敏元件遭到光照后产生电...

04/26
2020

  光耦继电器属于固态继电器,一般电磁继电器靠电流通过线圈使铁芯变成有磁性的磁铁吸合衔铁,从而使相关的触点动作控制负载的通断,而光耦继电器没有触点,其工作原理与光耦有点类似。  相对于电磁继电器,光耦继电器由于没有触点引起的磨损,使用寿命是...

04/25
2020

  固态光耦继电器(SSR)是电机械继电器的固态替代品,通常用于信号的通用开关和低功耗的交流/直流负载。它由发光二极管(LED)、光敏FET驱动和高压mosfet组成。继电器在LED打开时打开(触点闭合),在LED关闭时关闭(触点开启)。S...

04/24
2020

  光耦继电器是用光耦来控制开光状态的固态继电器,光耦继电器可以理解为光耦和可控硅的组合体。这种形式主要应用于继电器的额定工作电压低于电源电压的电路中。当电路闭合时,继电器线圈由于自感现象会产生电动势阻碍线圈中电流的增大,从而延长了吸合时间...

04/22
2020

   线性光耦是一种用于模拟信号隔离的光耦继电器器件,和普通光耦一样,线性光耦真正隔离的是电流。线性光耦能够保护被测试对象和测试电路,并减小环境干扰对测试电路的影响。    线性光耦的隔离原理与普通光耦没有差别,只是将普通光耦的单发单收模...

04/23
2020

  光耦继电器是固态继电器的一种。英文是SolidStateOptronicsRelay。一般继电器都是机械触点,靠通电流过线圈变成有磁性的磁铁吸合触点,从而控制开光状态。而光耦继电器工作原理类似于光耦(其实看等效电路图是一样的)。首先要搞...

04/21
2020

   光电偶合器件是把发光器件(如发光二极体)和光敏器件(如光敏三极管)组装在一起,通过光线实现耦合构成电—光和光—电的转换器件。    当电信号送入光电耦合器的输入端时,发光二极体通过电流而发光,光敏元件受到光照后产生电流,CE导通;当...

Structure and operational principle of Photrelays

Product line up

A PhotoRelays is a semiconductor relay with an LED as an input and MOSFET as an output.
It is used in various fields to improve device reliability and reduce size.






  • img01.jpg


  • (1)LED (light emitting diode)

  • (2)Photodiode dome array (PDA)

  • (3)MOS FET





、img02.jpg



  • (1)The LED lights when the current is connected at the input side.

  • (2)The light sent by the LED will be converted into voltage again when it is received by the photodiode .

  • (3)This voltage will be a gate voltage to drive MOS FET via control circuit.



Advantages of PhotoRelays


Obviously the PhotoRelays differ from the conventional electro-mechanical relays.
PhotoRelays are classified to semiconductor relays that have no moving contact, therefore they are superior to conventional electro-mechanical relays in life-expectance and reliability of contacts, operation speed, and their sizes.

But they also distinguish themselves from other switching solutions that utilize photo-couplers, photo-transistors etc.. PhotoRelays have MOSFET for output, therefore they are the most suitable devices for small analog signal switching.


Compared with Electro-Mechanical Relays
have moving contact:
Compared with SSR (Solid State Relays)
have phototriac for output:
●Longer lifetime (No limit on mechanical and electrical lifetime)
●Higher-speed and high-frequency switching
●Higher sensitivity (less power consumption)
●Smaller size
●Less contact problems such as arcs, bounce, and noise
●More resistant to vibration and impact
●No limitation for the mounting direction
●Able to control miniature analog signal
●Applicable to both AC/DC
●More sensibility
●Less leakage current
●Lower offset voltage
●Various contact structures such as 2a, 4a, 1b, 2b, and 1a1b in addition to 1a


PhotoRelays Technical Terminology


            1.Technical Terminology   

            2.Reliability tests   


            Here is PDF of this page.   

1. Technical Terminology


Term
Symbol
Description

Input
LED forward current
IF
Current that flows between the input terminals when the input diode is forward biased.

LED reverse voltage
VR
Reverse breakdown voltage between the input terminals.

Peak forward current
IFP
Maximum instantaneous value of the forward current.

LED operate current
IFon
Current when the output switches on (by increasing the LED current) with a designated supply voltage and load connected between the output terminals.

LED turn off current
IFoff
Current when the output switches off (by decreasing the LED current) after operating the device with a designated supply voltage and load connected between the output terminals.

LED dropout voltage
VF
Dropout voltage between the input terminals due to forward current.

Power dissipation
Pin
Allowable power dissipation between the input terminals.
Output
Load voltage
VL
Supply voltage range at the output used to normally operate the PhotoRelays.    Represents the peak value for AC voltages.

Continuous load current
IL
Maximum current value that flows continuously between the output terminals of the PhotoRelays under designated ambient temperature conditions. Represents the peak value for AC current.

On resistance
Ron
Obtained using the equation below from dropout voltage VDS
(on) between the output terminals (when a designated LED current is made to flow through the input terminals and the designated load current through the output terminals.)
    Ron
= V
DS
(on)/I
L

Off state leakage current
ILeak
Current flowing to the output when a designated supply voltage is applied between the output terminals with no LED current flow.

Power dissipation
Pout
Allowable power dissipation between the output terminals.

Open-circuit output voltage
Voc
Voltage required for driving a MOSFET

Short-circuit current
Isc
Current that is output from the driver when the input is turned on
Electrical    characteristics
Turn on time
Ton
Delay time until the output switches on after a designated LED current is made to flow through the input terminals.

Turn off time
Toff
Delay time until the output switches off after the designated LED current flowing through the input terminals is cut off.

I/O capacitance
Ciso
Capacitance between the input and output terminals.

Output capacitance
Cout
Capacitance between output terminals when LED current does not flow.

I/O isolation resistance
Riso
Resistance between terminals (input and output) when a specified voltage is applied between the input and output terminals.

Total power dissipation
PT
Allowable power dissipation in the entire circuit between the input and output terminals.

I/O isolation voltage
Viso
Critical value before dielectric breakdown occurs, when a high voltage is applied for 1 minute between the same terminals where the I/O isolation resistance is measured.
Ambient    temperature
Operating
Topr
Ambient temperature range in which the PhotoRelays can operate normally with a designated load current conditions.

Storage
Tstg
Ambient temperature range in which the PhotoRelays can be stored without applying voltage.
Max. operating frequency

Max. operating frequency at which a PhotoRelays can operate normally when applying the specified pulse input to the input terminal



2. Reliability tests


Classification
Item
Condition
Purpose
Life tests
High temperature storage test
Tstg
(Max.)
Determines resistance to long term storage at high temperature.

Low temperature storage test
Tstg
(Min.)
Determines resistance to long term storage at low temperature.

High temperature and high humidity storage test
85°C
185°F, 85%R.H.
Determines resistance to long term storage at high temperature and high humidity.

Continuous operation life test
VL
= Max., I
L
= Max.,
    IF
= Recommended LED forward current
Determines resistance to electrical stress (voltage and current).
Thermal    environment    tests
Temperature cycling test
Low storage temperature (Tstg
Min.)
    High storage temperature (TstgMax.)
Determines resistance to exposure to both low temperatures and high temperatures.

Thermal shock test
Low temperature (0°C)
(32°F),    High temperature (100°C)
(212°F)
Determines resistance to exposure to sudden changes in temperature.

Solder burning resistance
260±5°C
500±41°F, 10 s
Determines resistance to thermal stress occurring while soldering.
Mechanical    environment    tests
Vibration test
196 m/s2
{20 G}, 100 to 2,000 Hz*1
Determines the resistance to vibration sustained during shipment or operation.

Shock test
9,800 m/s2
{1,000 G} 0.5 ms*2;
    4,900 m/s2
{500 G} 1 ms
Determines the mechanical and structural resistance to shock.

Terminal strength test
Determined from terminal shape and cross section
Determines the resistance to external force on the terminals of the PhotoRelays mounted on the PC board while wiring or operating.

Solderability
245°C
473°F
3 s (with soldering flux)
Evaluates the solderability of the terminals.


*1 10 to 55 Hz at double amplitude of 3 mm for Power PhotoRelays.    *2 4,900 m/s2, 1 ms for Power PhotoRelays.



光耦继电器

光耦继电器是固态继电器的一种。英文是Solid State Optronics Relay。


一般继电器都是机械触点,靠通电流过线圈变成有磁性的磁铁吸合触点,从而控制开光状态。而光耦继电器工作原理类似于光耦,是由微电子电路,分立电子器件,电力电子功率器件组成的无触点开关。用隔离器件实现了控制端与负载端的隔离。固态继电器的输入端用微小的控制信号,达到直接驱动大电流负载。光耦继电器归于固态继电器,一般电磁继电器靠电流经过线圈使铁芯变成有磁性的磁铁吸合衔铁,从而使相关的触点动作操控负载的通断,而光耦继电器没有触点,其工作原理与光耦有点类似。光耦继电器为AC/DC并用的半导体继电器,指发光器件和受光器件一体化的器件。输入侧和输出侧电气性绝缘,但信号可以通过光信号传输。其内部的发光二极管是用来向光电元件放射光线的,光电元件接受光线并控制输出场效应管导通或截止。光耦继电器还有另一种可控硅整流管(SCR)输出,它的负载电流比场效应管更大,后者可达到数安培,而前者可达到几十安培。相对于电磁继电器,光耦继电器由于没有触点引起的磨损,使用寿命是无限的,同时也具有无震动、无切换声音等特性,与电磁继电器一样可控制各种负载(灯泡、发光二极管、加热器、马达等)。


光耦继电器有无机械触点,长寿命,低动作电流,高隔离电压,高速切换。低泄漏电流,交直流兼用。广泛用于测量仪器,通讯设备,办公自动化。在选用继电器时,最重要的指标是所选继电器的触点电流和电压,以及控制继电器导通开断的信号的电流和电压大小。在使用时,小功率的继电器一般直接焊接在电路板上,中大功率的继电器一般会安装在继电器座上,依据需要冉将继电器座安装在标准导轨上。由于继电器容易产生火花,因此在较大的功率的时候,建议考虑使用固态继电器、交流接触器等。通信用继电器将在今后继续增长,占到全球继电器市场的1/4。高频继电器是其发展的主要方向,在电信领域、无线通信、宽带输送接入等需求的推动下,已成为机电式继电器更新换代的新平台和下一代通信技术加速完善的助推器。体积更小,适用于表面装贴,高可靠,抗干扰性能优良的通信继电器需求旺盛;未来5G发展所需用的新型通信继电器将成为其发展主流。第四代通信继电器技术已日渐成熟,第三代移动通信的展开,为其提供良好的市场前景。光继电器/微电子继电器是电子产品向数字化、自动化、超小型化方向发展所必需的。


光继电器/微电子继电器由于其泄露率小、隔离性能好、输出特性稳定优良等优点,其应用领域在不断扩大。适用于“物联网”的光继电器由于其高灵敏性、高可靠性而成为优选产品,将会是下一代继电器发展的重要方向。



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